STF34N65M5 STMicroelectronics, STF34N65M5 Datasheet - Page 8

• Manufacturer Part Number: STF34N65M5
• Description: MOSFET N-Ch 650V 0.098 Ohm 29A MDMesh V MOS
• Manufacturer: STMicroelectronics

Specifications of STF34N65M5

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 29 A
• Resistance Drain-source Rds (on): 0.11 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220FP
• Power Dissipation: 30 W

Electrical characteristics
8/25
Figure 6.
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance
100
0.1
(A)
10
I
D
1
0.1
V
(V)
(A)
10
80
70
60
50
40
30
I
20
GS
12
10
D
0
2
0
8
6
4
0
0
V
Safe operating area for TO-247
Output characteristics
DS
20
5
1
30
10
V
DD
40
I
10
D
=520 V
=14 A
STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Tj=150°C
Tc=25°C
Single
pulse
15
50
60
100
20
70
V GS = 9 V
V GS = 8 V
V GS = 7 V
V GS = 6 V
25
V
DS
80
V
(V)
DS
Doc ID 022853 Rev 2
Q
100µs
AM15318v1
10µs
1ms
10ms
AM15319v1
g
(V)
AM15321v1
(nC)
V
(V)
500
100
0
400
300
200
DS
Figure 7.
Figure 9.
R
0.092
0.088
0.096
0.096
0.094
0.086
0.084
0.082
DS(on)
0.09
0.08
(A)
(Ω)
80
70
60
50
40
30
20
10
I
D
0
3
0
Thermal impedance for TO-247
Transfer characteristics
4
V
5
GS
V DS = 25 V
=10V
5
10
6
15
7
20
8
25
9
V
I
GS
D
(A)
AM15320v1
(V)
AM15322v1