STP110N55F6 STMicroelectronics, STP110N55F6 Datasheet - Page 3

• Manufacturer Part Number: STP110N55F6
• Description: MOSFET N-Ch 55V 4.3mOhm 55V STripFET VI
• Manufacturer: STMicroelectronics

Specifications of STP110N55F6

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Continuous Drain Current: 110 A
• Resistance Drain-source Rds (on): 5.2 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 150 W

STP110N55F6
1
Electrical ratings
Table 2.
1. Current limited by package.
Table 3.
Symbol
R
Symbol
I
R
thj-case
DM
P
V
V
T
thj-a
T
TOT
I
I
T
GS
DS
stg
D
D
l
j
(1)
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Storage temperature
Operating junction temperature
Absolute maximum ratings
Thermal data
Parameter
Parameter
C
Doc ID 019059 Rev 1
= 25 °C
GS
= 0)
C
C
= 25 °C
= 100 °C
- 55 to 175
Value
Value
± 20
78.5
62.5
440
300
110
150
55
1
1
Electrical ratings
W/°C
°C/W
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A
3/11