STP110N55F6 STMicroelectronics, STP110N55F6 Datasheet - Page 6

• Manufacturer Part Number: STP110N55F6
• Description: MOSFET N-Ch 55V 4.3mOhm 55V STripFET VI
• Manufacturer: STMicroelectronics

Specifications of STP110N55F6

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Continuous Drain Current: 110 A
• Resistance Drain-source Rds (on): 5.2 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 150 W

Test circuits
3
6/11
Figure 2.
Figure 4.
Figure 6.
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Test circuits
Switching times test circuit for
resistive load
Test circuit for inductive load
switching and diode recovery times
Unclamped inductive waveform
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
Doc ID 019059 Rev 1
1000
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 3.
Figure 5.
Figure 7.
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
µF
1kΩ
GMAX
td
Gate charge test circuit
Unclamped inductive load test
circuit
Switching time waveform
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
µF
100nF
90%
td
STP110N55F6
off
t
off
3.3
µF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
G
DD
DD