STP80N70F6 STMicroelectronics, STP80N70F6 Datasheet - Page 4

• Manufacturer Part Number: STP80N70F6
• Description: MOSFET N-Ch 68V 0.0063Ohm 96A STripFET VI
• Manufacturer: STMicroelectronics

Specifications of STP80N70F6

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 68 V
• Continuous Drain Current: 96 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Fall Time: 23 ns
• Gate Charge Qg: 99 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 110 W
• Rise Time: 29 ns
• Typical Turn-off Delay Time: 102 ns

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 4.
Table 5.
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
t
t
C
I
I
C
DS(on)
C
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
Q
oss
t
t
rss
iss
gs
gd
r
f
g
= 25 °C unless otherwise specified).
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage (V
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on-
resistance
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
On/off states
Dynamic
Switching times
Parameter
Parameter
Parameter
GS
DS
= 0)
= 0)
GS
= 0)
Doc ID 023433 Rev 1
I
V
V
V
V
V
D
V
V
V
V
(see Figure 14)
V
R
(see Figure 13)
DS
DS
GS
DS
GS
DS
GS
DD
GS
= 250 µA
DD
G
= 68 V, T
= 68 V
= ± 20 V
= V
= 10 V, I
= 4.7 Ω V
= 25 V, f = 1 MHz,
= 0
= 10 V
= 34 V, I
Test conditions
= 10 V, I
Test conditions
Test conditions
GS
, I
D
D
C
D
D
GS
= 250 µA
=125 °C
= 48 A
= 96 A,
= 48 A
= 10 V
Min.
Min.
Min.
68
2
-
-
-
-
0.0063
Typ.
5850
Typ.
Typ.
341
240
102
99
31
19
23
29
23
STP80N70F6
0.008
Max.
Max.
Max.
±100
100
1
4
-
-
-
-
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
V
V
Ω