PSMN3R3-80ES,127 NXP Semiconductors, PSMN3R3-80ES,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN3R3-80ES,127
• Description: MOSFET N-Ch 80V 3.3 m std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-80ES,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: I2PAK
• Fall Time: 44 ns
• Gate Charge Qg: 135 nC
• Power Dissipation: 338 W
• Rise Time: 43 ns
• Factory Pack Quantity: 50

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN3R3-80ES
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
0.05
0.02
0.2
0.1
single shot
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 1 — 31 October 2011
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
10
-3
Conditions
see
Vertical in free air
Figure 4
10
-2
PSMN3R3-80ES
Min
-
-
10
P
-1
Typ
0.22
60
tp
T
t
p (s)
© NXP B.V. 2011. All rights reserved.
003aaf613
δ =
Max
0.44
-
tp
T
t
1
Unit
K/W
K/W
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