PSMN3R3-80ES,127 NXP Semiconductors, PSMN3R3-80ES,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN3R3-80ES,127
• Description: MOSFET N-Ch 80V 3.3 m std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-80ES,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: I2PAK
• Fall Time: 44 ns
• Gate Charge Qg: 135 nC
• Power Dissipation: 338 W
• Rise Time: 43 ns
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN3R3-80ES
Product data sheet
Fig 17. Source current as a function of source-drain voltage; typical values
(A)
I
25
S
20
15
10
5
0
0
All information provided in this document is subject to legal disclaimers.
T
j
= 175 ° C
Rev. 1 — 31 October 2011
0.25
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
0.5
0.75
T
j
= 25 ° C
003aaf611
V
SD
(V)
1
PSMN3R3-80ES
© NXP B.V. 2011. All rights reserved.
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