PSMN4R6-60BS,118 NXP Semiconductors, PSMN4R6-60BS,118 Datasheet

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PSMN4R6-60BS,118

Manufacturer Part Number
PSMN4R6-60BS,118
Description
MOSFET Std N-chanMOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN4R6-60BS118.pdf (15 pages)

Specifications of PSMN4R6-60BS,118

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Resistance Drain-source Rds (on)
4.4 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Power Dissipation
211 W
Factory Pack Quantity
800
1. Product profile
Table 1.
[1]
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
Continuous current is limited by package.
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
PSMN4R6-60BS
N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK
Rev. 1 — 22 March 2012
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Conditions
T
T
T
V
Figure
V
see
V
see
V
V
j
mb
mb
GS
GS
GS
GS
sup
≥ 25 °C; T
= 25 °C; see
= 25 °C; see
Figure 13
Figure
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; T
≤ 60 V; R
12; see
14; see
j
D
D
D
≤ 175 °C
j(init)
GS
= 25 A; T
= 25 A; T
= 25 A; V
Figure 13
= 50 Ω; unclamped
Figure 1
Figure 2
= 25 °C; I
Figure 15
j
j
DS
= 100 °C; see
= 25 °C;
= 30 V;
D
= 100 A;
Suitable for standard level gate drive
sources
Motor control
Server power supplies
[1]
Min
-
-
-
-55
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
5.98
3.74
14.8
70.8
-
175
-
Max
60
100
211
7
4.4
-
266
Unit
V
A
W
°C
mΩ
mΩ
nC
nC
mJ

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PSMN4R6-60BS,118 Summary of contents

Page 1

... PSMN4R6-60BS N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK Rev. 1 — 22 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Marking code PSMN4R6-60BS All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN4R6-60BS Graphic symbol mbb076 3 Version SOT404 © NXP B.V. 2012. All rights reserved. ...

Page 3

... V sup GS 003aad760 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN4R6-60BS Min - = 20 kΩ -20 [ -55 - 100 ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN4R6-60BS Product data sheet N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK = DSon All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN4R6-60BS 003aad761 t p 100 μ 100 (V) DS © ...

Page 5

... Product data sheet N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK Conditions see Figure 4 minimum footprint; mounted on a printed circuit board −4 − All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN4R6-60BS Min Typ Max - 0.38 0. 003aad762 t P δ = ...

Page 6

... D DS see Figure MHz °C; see Figure 1.2 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN4R6-60BS Min Typ Max 4 0. ...

Page 7

... DS Fig 6. 003aad765 8000 C (pF) 6000 4000 = 25 °C T 2000 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN4R6-60BS Min Typ = 25 ° Forward transconductance as a function of drain current; typical values ...

Page 8

... T (°C) j Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature. All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN4R6-60BS 03aa35 min typ max (V) GS 003aad696 0 60 120 180 T (°C) j © ...

Page 9

... I (A) D Fig 14. Gate charge waveform definitions 003aad771 (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN4R6-60BS GS(pl) V GS(th GS1 GS2 ...

Page 10

... Product data sheet N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN4R6-60BS 003aad770 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2012. All rights reserved ...

Page 11

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN4R6-60BS mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved. SOT404 ...

Page 12

... NXP Semiconductors 9. Revision history Table 8. Revision history Document ID Release date PSMN4R6-60BS v.1 20120322 PSMN4R6-60BS Product data sheet N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN4R6-60BS © NXP B.V. 2012. All rights reserved ...

Page 14

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN4R6-60BS © NXP B.V. 2012. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 22 March 2012 Document identifier: PSMN4R6-60BS ...

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