PSMN4R6-60PS NXP Semiconductors, PSMN4R6-60PS Datasheet

MOSFET,N CH,60V,100A,TO-220AB

PSMN4R6-60PS

Manufacturer Part Number
PSMN4R6-60PS
Description
MOSFET,N CH,60V,100A,TO-220AB
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN4R6-60PS127.pdf (15 pages)

Specifications of PSMN4R6-60PS

Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
3.5mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor
RoHS Compliant
Transistor Case Style
TO-220AB
Rohs Compliant
Yes
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
Table 1.
[1]
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
PSMN4R6-60PS
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
Rev. 02 — 1 November 2010
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Continuous current is limited by package.
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive
drain-source avalanche
energy
Conditions
T
T
T
V
T
V
T
V
V
see
V
I
R
D
j
mb
mb
j
j
GS
GS
GS
DS
GS
GS
≥ 25 °C; T
= 175 °C; see
= 25 °C; see
= 100 A; V
Figure 15
= 25 °C; see
= 25 °C; see
= 10 V; I
= 10 V; I
= 10 V; I
= 30 V; see
= 10 V; T
= 50 Ω; unclamped
j
D
D
D
sup
≤ 175 °C
j(init)
= 25 A;
= 25 A;
= 25 A;
Figure 13
≤ 60 V;
Figure
Figure 12
Figure 1
Figure 2
Suitable for standard level gate drive
sources
Motor control
Server power supplies
= 25 °C;
14;
[1]
Min
-
-
-
-55
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
8.4
3.5
14.8 -
70.8 -
-
Max Unit
60
100
211
175
11.5
4.6
266
V
A
W
°C
mΩ
mΩ
nC
nC
mJ

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PSMN4R6-60PS Summary of contents

Page 1

... PSMN4R6-60PS N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 Rev. 02 — 1 November 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN4R6-60PS Graphic symbol mbb076 Version SOT78 © NXP B.V. 2010. All rights reserved ...

Page 3

... V sup GS 003aad760 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN4R6-60PS Min - = 20 kΩ -20 [ °C; see Figure -55 -55 [ ° 100 A; ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN4R6-60PS Product data sheet N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 = DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN4R6-60PS 003aad761 10 μs 100 μ 100 (V) DS © ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN4R6-60PS Product data sheet N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 Conditions see Figure 4 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN4R6-60PS Min Typ Max - 0.38 1.04 003aad762 t P δ ...

Page 6

... Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 1.2 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN4R6-60PS Min Typ Max = -55 ° ° 4 ° 125 ° 200 = 25 °C - ...

Page 7

... GS 1 (V) DS Fig 6. 003aad765 8000 C (pF) 6000 4000 = 25 °C T 2000 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN4R6-60PS Min Typ = 25 ° Forward transconductance as a function of drain current; typical values Input and reverse transfer capacitances as a ...

Page 8

... T (°C) j Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN4R6-60PS 03aa35 min typ max (V) GS 003aad696 0 60 120 180 T (° ...

Page 9

... N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 003aad767 5 5 100 I (A) D Fig 14. Gate charge waveform definitions 003aad771 (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN4R6-60PS GS(pl) V GS(th GS1 GS2 G(tot (pF) ...

Page 10

... Product data sheet N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN4R6-60PS 003aad770 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...

Page 11

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN4R6-60PS mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN4R6-60PS v.2 20101101 • Modifications: Various changes to content. PSMN4R6-60PS v.1 20100311 PSMN4R6-60PS Product data sheet N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 Data sheet status Change notice Product data sheet ...

Page 13

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN4R6-60PS © NXP B.V. 2010. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN4R6-60PS Trademarks © NXP B.V. 2010. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 November 2010 Document identifier: PSMN4R6-60PS ...

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