PSMN4R6-60PS NXP Semiconductors, PSMN4R6-60PS Datasheet - Page 8

• Manufacturer Part Number: PSMN4R6-60PS
• Description: MOSFET,N CH,60V,100A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R6-60PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 3.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN4R6-60PS
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
R
V
(mΩ)
DSon
GS(th)
(V)
20
15
10
5
4
3
2
1
0
5
0
−60
of gate-source voltage; typical values
junction temperature
Drain-source on-state resistance as a function
4
0
8
12
60
max
min
typ
120
16
All information provided in this document is subject to legal disclaimers.
V
003aad766
003aad280
T
GS
j
(°C)
(V)
Rev. 02 — 1 November 2010
180
20
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
2.4
1.6
1.2
0.8
0.4
−1
−2
−3
−4
−5
−6
2
0
-60
gate-source voltage
factor as a function of junction temperature.
0
0
2
PSMN4R6-60PS
min
60
typ
4
120
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aad696
T
j
(V)
(°C)
03aa35
180
6
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