BUZ32 H Infineon Technologies, BUZ32 H Datasheet
BUZ32 H
Specifications of BUZ32 H
Related parts for BUZ32 H
BUZ32 H Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated . Halogen-free according to IEC61249-2-21 Type V DS BUZ 32 H 200 V Maximum Ratings Parameter Continuous drain current ˚C C Pulsed drain current T ...
Page 2
Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA ˚ Gate threshold voltage DS, D Zero ...
Page 3
Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ DS(on)max, D Input capacitance MHz GS DS ...
Page 4
Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C C Inverse diode direct current,pulsed ˚C C Inverse diode forward voltage ...
Page 5
Power dissipation = ƒ tot tot Safe operating area = ƒ parameter ...
Page 6
Typ. output characteristics = ƒ parameter µ 75W tot ...
Page 7
Drain-source on-resistance = ƒ (on) j parameter 1.3 Ω 1 (on) 1.0 0.9 0.8 0.7 0.6 98% 0.5 typ 0.4 0.3 0.2 0.1 ...
Page 8
T Avalanche energy E AS parameter 9 Ω 130 mJ 110 E AS 100 ...
Page 9
Package Drawing: TO220-3 Rev. 2.4 Page 9 BUZ 32 H 2009-11-10 ...
Page 10
... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...