BUZ32 H Infineon Technologies, BUZ32 H Datasheet - Page 8

• Manufacturer Part Number: BUZ32 H
• Description: MOSFET N-Channel 200V Transistor
• Manufacturer: Infineon Technologies

Specifications of BUZ32 H

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.5 A
• Resistance Drain-source Rds (on): 0.4 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 30 nS
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 75 W
• Rise Time: 40 nS
• Typical Turn-off Delay Time: 55 nS
• Part # Aliases: BUZ32HXK BUZ32HXKSA1 SP000682998

V
Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
Rev. 2.4
(BR)DSS
E
(BR)DSS
GS
AS
= 25 Ω , L = 2 mH
240
230
225
220
215
210
130
110
100
205
200
195
190
185
180
mJ
90
80
70
60
50
40
30
20
10
V
0
-60
20
= ƒ ( T
D
40
= 9.5 A, V
-20
j
)
60
20
AS
80
DD
= ƒ ( T
= 50 V
60
100
j
)
120
100
˚C
T
T
˚C
j
j
160
160
Page 8
Typ. gate charge
V
parameter: I
V
GS
GS
= ƒ ( Q
16
12
10
V
8
6
4
2
0
0
Gate
D puls
4
)
8
= 14 A
0,2
12
V
DS max
16
20
24
28
2009-11-10
0,8
BUZ 32 H
32 nC 38
V
Q
DS max
Gate