SIHP22N60E-GE3 Vishay/Siliconix, SIHP22N60E-GE3 Datasheet - Page 7
![no-image](/images/no-image-200.jpg)
SIHP22N60E-GE3
Manufacturer Part Number
SIHP22N60E-GE3
Description
MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
Manufacturer
Vishay/Siliconix
Datasheet
1.SIHP22N60E-E3.pdf
(8 pages)
Specifications of SIHP22N60E-GE3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
21 A
Resistance Drain-source Rds (on)
180 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220AB-3
Fall Time
54 ns
Forward Transconductance Gfs (max / Min)
6.4 S
Gate Charge Qg
86 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
227 W
Rise Time
68 ns
Typical Turn-off Delay Time
59 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIHP22N60E-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Revison: 08-Oct-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
www.vishay.com
1
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
e(1)
E
2
e
3
b
M
b(1)
*
Ø P
For technical questions, contact:
C
A
J(1)
F
TO-220AB
1
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
• Xi’an and Mingxin actual photo
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
DIM.
hvm@vishay.com
H(1)
b(1)
e(1)
J(1)
L(1)
Ø P
A
D
E
Q
b
c
e
F
L
www.vishay.com/doc?91000
14.85
10.04
13.35
MIN.
4.25
0.69
1.20
0.36
2.41
4.88
1.14
6.09
3.32
3.54
2.60
2.41
MILLIMETERS
Package Information
MAX.
15.49
10.51
14.02
4.65
1.01
1.73
0.61
2.67
5.28
1.40
6.48
2.92
3.82
3.94
3.00
Vishay Siliconix
Document Number: 71195
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
MIN.
INCHES
MAX.
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118