SI4412DY-T1-GE3 Vishay/Siliconix, SI4412DY-T1-GE3 Datasheet

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SI4412DY-T1-GE3

Manufacturer Part Number
SI4412DY-T1-GE3
Description
MOSFET 30V 7.0A 2.5W 28mohm @ 10V
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI4412DY-T1-GE3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Resistance Drain-source Rds (on)
28 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Power Dissipation
2.5 W
Factory Pack Quantity
2500
Part # Aliases
SI4412DY-GE3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4412DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 70154
S09-0705-Rev. D, 27-Apr-09
Ordering Information: Si4412DY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
V
DS
30
(V)
G
S
S
S
Si4412DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.042 at V
0.028 at V
1
2
3
4
R
DS(on)
J
a
Top View
N-Channel 30-V (D-S) Rated MOSFET
SO-8
= 150 °C)
a
GS
GS
(Ω)
= 4.5 V
= 10 V
a
8
7
6
5
D
D
D
D
a
A
= 25 °C, unless otherwise noted
I
± 7.0
± 5.8
D
(A)
T
T
T
T
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Compliant to RoHS Directive 2002/95/EC
Definition
TrenchFET
Symbol
Symbol
T
R
J
V
V
I
P
, T
DM
I
I
thJA
GS
DS
D
S
D
®
stg
Power MOSFET
G
N-Channel MOSFET
- 55 to 150
Limit
Limit
± 7.0
± 5.8
± 20
± 30
D
S
2.3
2.5
1.6
30
50
Vishay Siliconix
Si4412DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI4412DY-T1-GE3

SI4412DY-T1-GE3 Summary of contents

Page 1

... GS SO Top View Ordering Information: Si4412DY-T1-E3 (Lead (Pb)-free) Si4412DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si4412DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 70154 S09-0705-Rev. D, 27-Apr- 1500 1200 900 600 300 Si4412DY Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C ...

Page 4

... Si4412DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 DIM ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep- ...

Page 6

... TrenchFET Power MOSFETs Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same ...

Page 7

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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