BUK9620-55A /T3 NXP Semiconductors, BUK9620-55A /T3 Datasheet - Page 6

• Manufacturer Part Number: BUK9620-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9620-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 54 A
• Resistance Drain-source Rds (on): 0.018 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 93 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 118 W
• Rise Time: 124 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 92 ns
• Part # Aliases: BUK9620-55A,118

NXP Semiconductors
BUK9620-55A
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
10
I
10
10
10
10
10
200
180
160
140
120
100
D
80
60
40
20
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
V
GS
1
(V) =
min
4
8
typ
6
9
2
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
03aa36
V
DS
(V)
03nc91
10
2.2
(V)
7
6
5
4
3
10
3
Rev. 02 — 4 June 2010
Fig 6.
Fig 8.
R
(mΩ)
(S)
g
DSon
fs
30
25
20
15
10
50
40
30
20
10
0
of drain current; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
2
0
N-channel TrenchMOS logic level FET
20
4
BUK9620-55A
40
6
60
8
© NXP B.V. 2010. All rights reserved.
V
GS
I
D
03nc90
03nc88
(A)
(V)
10
80
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