SI4936ADY-E3 Vishay/Siliconix, SI4936ADY-E3 Datasheet - Page 7

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SI4936ADY-E3

Manufacturer Part Number
SI4936ADY-E3
Description
MOSFET 30V 5.9A 2W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI4936ADY-E3

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.9 A
Resistance Drain-source Rds (on)
36 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
14 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.1 W
Rise Time
14 ns
Factory Pack Quantity
100
Tradename
TrenchFET
Typical Turn-off Delay Time
30 ns
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
www.vishay.com
22
Return to Index
Return to Index
(0.559)
0.022
Recommended Minimum Pads
Dimensions in Inches/(mm)
(4.369)
0.172
(1.270)
(0.711)
0.050
0.028
Document Number: 72606
Revision: 21-Jan-08

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