OM7802/BGU7003/CMMB,598 NXP Semiconductors, OM7802/BGU7003/CMMB,598 Datasheet - Page 12

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OM7802/BGU7003/CMMB,598

Manufacturer Part Number
OM7802/BGU7003/CMMB,598
Description
Amplifier IC Development Tools BGU7003 CMMB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of OM7802/BGU7003/CMMB,598

Product
Evaluation Board
Tool Is For Evaluation Of
BGU7003
Operating Supply Voltage
2.85 V
Operating Supply Current
15 mA
NXP Semiconductors
BGU7003
Product data sheet
Fig 17. Insertion power gain (|s
Fig 19. Load power and third order intermodulation
|S
(dB)
(dB)
−120
21
P
−40
−80
30
|
20
10
40
2
0
0
−40
0
T
V
matched to 50 Ω).
frequency; typical values
T
f = 1.575 GHz; f
V
matched to 50 Ω)
distortion as function of drive power;
typical values
amb
amb
ENABLE
ENABLE
IMD3
500
= 25 °C; V
= 25 °C; V
P
L
−30
≥ 0.7 V; Z
≥ 0.7 V; Z
1000
CC
CC
1
IP3
−20
= f + 138 MHz; f
1500
S
S
= 2.5 V; I
= 2.5 V; I
I
= Z
= −0.2 dBm
= Z
L
L
2000
= 50 Ω (input and output
= 50 Ω (input and output
−10
CC(tot)
CC(tot)
21
|
2500
2
) as a function of
2
= 5.0 mA;
= 5.0 mA;
= f + 276 MHz;
P
f (MHz)
0
3000 3500
drive
001aaj669
001aaj671
(dBm)
10
Rev. 02 — 22 June 2010
Wideband silicon germanium low-noise amplifier MMIC
Fig 18. Reverse Isolation (|s
Fig 20. Load power and third order intermodulation
|S
(dB)
(dB)
−120
12
P
−20
−40
−60
−40
−80
|
40
2
0
0
−40
0
T
V
matched to 50 Ω).
frequency; typical values
T
f = 1.575 GHz; f
V
matched to 50 Ω)
distortion as function of drive power;
typical values
amb
amb
ENABLE
ENABLE
500
= 25 °C; V
= 25 °C; V
≥ 0.7 V; Z
≥ 0.7 V; Z
IMD3
P
−30
1000
L
CC
CC
1
= f + 5 MHz; f
1500
S
S
= 2.5 V; I
= 2.5 V; I
IP3
= Z
= Z
−20
I
L
= −5.2 dBm
L
2000
12
= 50 Ω (input and output
= 50 Ω (input and output
|
2
CC(tot)
CC(tot)
) as a function of
2500
2
= f + 10 MHz;
−10
BGU7003
= 5.0 mA;
= 5.0 mA;
P
© NXP B.V. 2010. All rights reserved.
drive
f (MHz)
3000 3500
001aaj702
001aaj672
(dBm)
0
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