SI4947ADY-E3 Vishay/Siliconix, SI4947ADY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4947ADY-E3
• Description: MOSFET 30V 3.9A 2W
• Manufacturer: Vishay/Siliconix

Specifications of SI4947ADY-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Resistance Drain-source Rds (on): 80 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 9 ns
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 21 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71101
S09-0870-Rev. D, 18-May-09
0.30
0.24
0.18
0.12
0.06
0.00
10
30
10
8
6
4
2
0
1
0
0
0
V
I
V
D
Source-Drain Diode Forward Voltage
DS
GS
= 3.9 A
On-Resistance vs. Drain Current
= 10 V
= 4.5 V
0.3
2
3
V
SD
Q
g
- Source-to-Drain Voltage (V)
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
0.6
6
4
T
J
= 150 °C
0.9
9
6
T
J
= 25 °C
V
GS
1.2
= 10 V
12
8
1.5
15
10
1000
0.40
0.32
0.24
0.16
0.08
0.00
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
GS
= 3.9 A
= 10 V
6
2
V
V
GS
DS
T
0
C
J
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
Capacitance
25
12
4
C
50
iss
Vishay Siliconix
Si4947ADY
18
6
75
I
D
100
www.vishay.com
= 3.9 A
24
8
125
150
30
10
3