SI4876DY-E3 Vishay/Siliconix, SI4876DY-E3 Datasheet

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SI4876DY-E3

Manufacturer Part Number
SI4876DY-E3
Description
MOSFET 20V 21A 3.6W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI4876DY-E3

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
21 A
Resistance Drain-source Rds (on)
5 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
30 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
3.6 W
Rise Time
30 ns
Factory Pack Quantity
100
Typical Turn-off Delay Time
175 ns
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71312
S09-0221-Rev. F, 09-Feb-09
Ordering Information: Si4876DY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
20
(V)
G
S
S
S
0.0075 at V
0.005 at V
1
2
3
4
Si4876DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
Top View
SO-8
J
a
= 150 °C)
GS
a
GS
(Ω)
= 4.5 V
= 2.5 V
N-Channel 20-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
A
I
= 25 °C, unless otherwise noted
D
21
17
Steady State
Steady State
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
Symbol
Symbol
T
R
R
Available
J
V
V
E
I
I
P
, T
DM
I
AS
I
thJA
thJF
GS
DS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
10 s
3.6
1.9
21
15
29
67
13
3
G
N-Channel MOSFET
- 55 to 150
± 12
20
50
42
88
Steady State
D
S
Maximum
1.3
1.6
0.8
14
10
35
80
16
Vishay Siliconix
Si4876DY
www.vishay.com
°C/W
Unit
Unit
mS
mJ
°C
W
V
A
1

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SI4876DY-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4876DY-T1-E3 (Lead (Pb)-free) Si4876DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction) ...

Page 2

... Si4876DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71312 S09-0221-Rev. F, 09-Feb 100 120 140 °C J 0.8 1.0 1.2 Si4876DY Vishay Siliconix 8000 C iss 6000 4000 2000 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 4.5 V ...

Page 4

... Si4876DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 DIM ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep- ...

Page 6

... TrenchFET Power MOSFETs Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same ...

Page 7

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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