SI4559EY-T1 Vishay/Siliconix, SI4559EY-T1 Datasheet - Page 5

• Manufacturer Part Number: SI4559EY-T1
• Description: MOSFET 60V 4.5/3.1A
• Manufacturer: Vishay/Siliconix

Specifications of SI4559EY-T1

• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A, 3.1 A
• Resistance Drain-source Rds (on): 55 mOhms, 120 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 11 ns, 35 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.4 W
• Rise Time: 11 ns, 10 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 36 ns, 12 ns

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09
1.0
0.8
0.6
0.4
0.2
30
24
18
12
10
0
6
0
8
6
4
2
0
0
0
0
I
D
= 3.1 A
V
GS
1
On-Resistance vs. Drain Current
= 10 V, 9 V, 8 V, 7 V, 6 V
4
4
V
DS
Output Characteristics
Q
g
-
-
Drain-to-Source Voltage (V )
I
2
D
Total Gate Charge (nC)
V
Gate Charge
- Drain Current (A)
DS
8
8
V
= 30 V
GS
3
= 4.5 V
12
12
4
V
GS
16
16
= 10 V
5
5 V
3 V
4 V
20
20
6
1400
1200
1000
800
600
400
200
2.0
1.6
1.2
0.8
0.4
20
16
12
8
4
0
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
I
C
D
- 25
rss
= 3.1 A
10
C
V
V
0
T
oss
GS
DS
Transfer Characteristics
2
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
20
25
T
C
Capacitance
= - 55 °C
V
GS
50
Vishay Siliconix
30
= 10 V
4
75
Si4559EY
100
40
25 °C
- 150 °C
www.vishay.com
C
6
125
iss
50
150
175
60
8
5