IRFP460PPBF Vishay/Siliconix, IRFP460PPBF Datasheet
IRFP460PPBF
Specifications of IRFP460PPBF
Related parts for IRFP460PPBF
IRFP460PPBF Summary of contents
Page 1
... Single • Simple Drive Requirements • Lead (Pb)-free Available D DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of S TO-220 devices ...
Page 2
IRFP460, SiHFP460 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...
Page 3
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted V GS Top 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4 µs Pulse Width ...
Page 4
IRFP460, SiHFP460 Vishay Siliconix 10 000 MHz iss rss gd 8000 oss ds 6000 C 4000 C oss ...
Page 5
T , Case Temperature (°C) 91237_09 C Fig Maximum Drain Current vs. Case Temperature 0.5 0.1 0.2 0.1 0.05 0.02 0. ...
Page 6
IRFP460, SiHFP460 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 50 kΩ 0.2 ...
Page 7
D.U. Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data ...
Page 8
TO-247AC (High Voltage E MILLIMETERS DIM. MIN. ...
Page 9
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...