IRFP450-EPBF Vishay/Siliconix, IRFP450-EPBF Datasheet - Page 7

• Manufacturer Part Number: IRFP450-EPBF
• Description: MOSFET N-Chan 500V 14 Amp
• Manufacturer: Vishay/Siliconix

Specifications of IRFP450-EPBF

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Resistance Drain-source Rds (on): 0.4 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Fall Time: 44 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 190 W
• Rise Time: 47 ns
• Factory Pack Quantity: 500
• Typical Turn-off Delay Time: 92 ns

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91233.
Document Number: 91233
S-81271-Rev. A, 16-Jun-08
Re-applied
voltage
Reverse
recovery
current
+
R
-
G
D.U.T
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
Fig. 14 - For N-Channel
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
dI/dt
current transformer
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
= 10 V*
+
-
IRFP450, SiHFP450
V
DD
Vishay Siliconix
www.vishay.com
7