SI4864DY-T1 Vishay/Siliconix, SI4864DY-T1 Datasheet

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SI4864DY-T1

Manufacturer Part Number
SI4864DY-T1
Description
MOSFET 20V 25A 1.6W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI4864DY-T1

Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
17 A
Resistance Drain-source Rds (on)
3.5 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
44 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.6 W
Rise Time
44 ns
Factory Pack Quantity
2500
Tradename
TrenchFET
Typical Turn-off Delay Time
150 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4864DY-T1
Manufacturer:
TOSHIBA
Quantity:
12 000
Part Number:
SI4864DY-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71449
S09-0221-Rev. C, 09-Feb-09
Ordering Information: Si4864DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
20
(V)
G
S
S
S
1
2
3
4
Si4864DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.0035 at V
0.0047 at V
Top View
R
SO-8
DS(on)
J
a
= 150 °C)
a
GS
GS
(Ω)
= 4.5 V
= 2.5 V
N-Channel 20-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
A
I
D
= 25 °C, unless otherwise noted
25
20
(A)
Steady State
Steady State
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Low-Side MOSFET in Synchronous Buck DC/DC
Symbol
Symbol
T
R
R
Available
Converters in Servers and Routers
J
V
V
Low 3.5 mΩ R
PWM (Q
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
gd
®
and R
Power MOSFETs: 2.5 V Rated
Typical
DS(on)
10 s
2.9
3.5
2.2
G
25
20
29
67
13
g
) Optimized
N-Channel MOSFET
- 55 to 150
± 8
20
60
D
S
Steady State
Maximum
1.3
1.6
17
13
35
80
16
Vishay Siliconix
1
Si4864DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4864DY-T1 Summary of contents

Page 1

... Top View Ordering Information: Si4864DY-T1-E3 (Lead (Pb)-free) Si4864DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) ...

Page 2

... Si4864DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71449 S09-0221-Rev. C, 09-Feb °C J 0.8 1.0 1.2 Si4864DY Vishay Siliconix 7500 6000 C iss 4500 3000 C oss 1500 C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 ...

Page 4

... Si4864DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 DIM ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep- ...

Page 6

... TrenchFET Power MOSFETs Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same ...

Page 7

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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