SI1901DL-T1 Vishay/Siliconix, SI1901DL-T1 Datasheet

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SI1901DL-T1

Manufacturer Part Number
SI1901DL-T1
Description
MOSFET 20V 0.18A
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI1901DL-T1

Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
- 180 mA
Resistance Drain-source Rds (on)
3.8 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Fall Time
25 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
0.2 W
Rise Time
25 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
19 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1901DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71304
S-01886—Rev. A, 28-Aug-00
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t
DS
–20
–20
(V)
J
J
a
a
3.8 @ V
5.0 @ V
= 150 C)
= 150 C)
a
r
DS(on)
Parameter
Parameter
G
D
S
GS
GS
1
1
2
a
a
10 sec.
= –4.5 V
= –2.5 V
( )
1
2
3
P-Channel 20-V (D-S) MOSFET
SC-70 (6-Leads)
SOT-363
Top View
6
5
4
I
D
G
S
D
New Product
2
1
2
–180
–100
T
T
T
T
(mA)
A
A
A
A
= 25 C
= 70 C
= 25 C
= 70 C
Symbol
Symbol
T
R
V
J
V
I
P
P
, T
DM
thJA
I
I
GS
DS
D
D
Marking Code
D
D
stg
QD XX
Part # Code
Lot Traceability
and Date Code
–55 to 150
Limit
Limit
–180
–140
–500
0.20
0.13
–20
625
8
Vishay Siliconix
Si1901DL
www.vishay.com
Unit
Unit
mA
C/W
W
W
V
V
C
A
1

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SI1901DL-T1 Summary of contents

Page 1

... S Part # Code 2 Symbol stg Symbol R thJA Si1901DL Vishay Siliconix Limit Unit – –180 mA A –140 –500 0. 0.13 –55 to 150 C Limit Unit 625 C/W www.vishay.com 1 ...

Page 2

... Si1901DL Vishay Siliconix Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a a On-State Drain Current On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... V 0.3 3 2 2.5 3.0 1.6 1.4 1.2 1.0 0.8 0.6 500 600 –50 Si1901DL Vishay Siliconix Transfer Characteristics T = – 125 C 0 0.5 1.0 1.5 2.0 2.5 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

Page 4

... Si1901DL Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.01 0.001 0.00 0 – Source-to-Drain Voltage (V) SD www.vishay.com 4 New Product On-Resistance vs. Gate-to-Source Voltage 1.5 Threshold Voltage 0 0.2 0.1 0.0 –0.1 –0.2 –50 – 100 T – ...

Page 5

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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