SI4888DY-T1 Vishay/Siliconix, SI4888DY-T1 Datasheet

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SI4888DY-T1

Manufacturer Part Number
SI4888DY-T1
Description
MOSFET 30V 16A 3.5W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI4888DY-T1

Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Resistance Drain-source Rds (on)
7 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
3.5 W
Rise Time
10 ns
Factory Pack Quantity
2500
Tradename
TrenchFET
Typical Turn-off Delay Time
44 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4888DY-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4888DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 949
Part Number:
SI4888DY-T1-E3
Manufacturer:
VISHAY
Quantity:
3 000
Part Number:
SI4888DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4888DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71336
S09-0221-Rev. F, 09-Feb-09
Ordering Information: Si4888DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
G
N-Channel Reduced Q
S
S
S
Si4888DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.010 at V
0.007 at V
1
2
3
4
R
DS(on)
J
a
Top View
SO-8
= 150 °C)
GS
GS
(Ω)
= 4.5 V
= 10 V
a
8
7
6
5
a
D
D
D
D
a
A
= 25 °C, unless otherwise noted
I
D
Steady State
Steady State
16
13
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
g
, Fast Switching MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• High-Efficiency PWM Optimized
• 100 % R
Symbol
Symbol
T
R
R
J
Available
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
10 s
3.0
3.5
2.2
16
13
29
65
15
G
N-Channel MOSFET
- 55 to 150
± 20
± 50
30
Steady State
D
S
Maximum
1.40
1.6
1.0
11
35
80
18
Vishay Siliconix
8
Si4888DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4888DY-T1 Summary of contents

Page 1

... GS SO Top View Ordering Information: Si4888DY-T1-E3 (Lead (Pb)-free) Si4888DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si4888DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71336 S09-0221-Rev. F, 09-Feb- °C J 0.8 1.0 1.2 Si4888DY Vishay Siliconix 2500 2000 C iss 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si4888DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 1 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 DIM ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep- ...

Page 6

... TrenchFET Power MOSFETs Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same ...

Page 7

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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