BC557B T/R NXP Semiconductors, BC557B T/R Datasheet - Page 2

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BC557B T/R

Manufacturer Part Number
BC557B T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE RADIAL
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC557B T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
220 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-54
Dc Current Gain Hfe Max
220 at 2 mA at 5 V
Maximum Power Dissipation
500 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
2000
Part # Aliases
BC557B,116
NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complements: BC546 and BC547.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2004 Oct 11
BC556
BC557
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
TYPE NUMBER
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistors
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
BC556
BC557
BC556
BC557
SC-43A
NAME
PARAMETER
plastic single-ended leaded (through hole) package; 3 leads
open emitter
open base
open collector
T
amb
2
≤ 25 °C
PINNING
handbook, halfpage
DESCRIPTION
CONDITIONS
PACKAGE
Fig.1
PIN
1
2
3
Simplified outline (TO-92; SOT54)
and symbol.
1
2
emitter
base
collector
3
−65
−65
MIN.
DESCRIPTION
BC556; BC557
−80
−50
−65
−45
−5
−100
−200
−200
500
+150
150
+150
MAM281
Product data sheet
MAX.
2
VERSION
SOT54
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
3
1

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