BC557B T/R NXP Semiconductors, BC557B T/R Datasheet - Page 3

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BC557B T/R

Manufacturer Part Number
BC557B T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE RADIAL
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC557B T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
220 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-54
Dc Current Gain Hfe Max
220 at 2 mA at 5 V
Maximum Power Dissipation
500 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
2000
Part # Aliases
BC557B,116
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Notes
1. V
2. V
2004 Oct 11
R
I
I
h
V
V
V
C
C
f
F
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BE
PNP general purpose transistors
th(j-a)
c
e
= 25 °C unless otherwise specified.
BEsat
BE
decreases by about −2 mV/K with increasing temperature.
decreases by about −1.7 mV/K with increasing temperature.
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
BC556
BC557
BC556A
BC556B; BC557B
BC557C
PARAMETER
PARAMETER
V
V
V
I
see Figs 2, 3 and 4
I
I
I
I
V
V
V
V
V
V
f = 1 kHz; B = 200 Hz
C
C
C
C
C
CB
CB
EB
CE
CE
CB
EB
CE
CE
= −2 mA; V
= −10 mA; I
= −100 mA; I
= −10 mA; I
= −100 mA; I
= −5 V; I
= −0.5 V; I
= −30 V; I
= −30 V; I
= −5 V; I
= −5 V; I
= −10 V; I
= −5 V; I
= −5 V; I
3
CONDITIONS
C
C
C
C
C
CE
E
E
B
B
E
= 0 V
C
note 1
= −2 mA; note 2
= −10 mA; note 2
= −10 mA; f = 100 MHz 100
= −200 μA; R
B
B
= 0 A
= 0 A; T
= −0.5 mA
= −0.5 mA; note 1
= i
= i
= −5 V;
= −5 mA
= −5 mA; note 1
e
CONDITIONS
c
= 0 A; f = 1 MHz
= 0 A; f = 1 MHz
j
= 150 °C
S
= 2 kΩ;
125
125
125
220
420
−600
MIN.
VALUE
250
BC556; BC557
−1
−60
−180
−750
−930
−650
3
10
2
TYP.
Product data sheet
−15
−4
−100
475
800
250
475
800
−300
−650
−750
−820
10
MAX. UNIT
UNIT
K/W
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB

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