BC847BV T/R NXP Semiconductors, BC847BV T/R Datasheet - Page 10

• Manufacturer Part Number: BC847BV T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC847BV T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-666
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: BC847BV,115

NXP Semiconductors
BC847_SER
Product data sheet
Fig 15. Package outline SOT416 (SC-75)
Fig 16. Package outline SOT883 (SC-101)
All information provided in this document is subject to legal disclaimers.
1.75
1.45
Dimensions in mm
Dimensions in mm
Rev. 8 — 20 August 2012
0.9
0.7
0.30
0.22
0.30
0.22
0.20
0.12
1
2
0.62
0.55
0.55
0.47
0.35
3
1.8
1.4
1
1
45 V, 100 mA NPN general-purpose transistors
3
0.65
2
0.30
0.15
0.45
0.15
0.50
0.46
BC847 series
0.95
0.60
0.25
0.10
1.02
0.95
04-11-04
03-04-03
© NXP B.V. 2012. All rights reserved.
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