IS62WV5128BLL-55T2I ISSI, Integrated Silicon Solution Inc, IS62WV5128BLL-55T2I Datasheet - Page 6

• Manufacturer Part Number: IS62WV5128BLL-55T2I
• Description: IC SRAM 4MBIT 55NS 32TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS62WV5128BLL-55T2I

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (512K x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS62WV5128ALL,
POWER SUPPLY CHARACTERISTICS
62WV5128BLL
Note:
1. At f = f
6
POWER SUPPLY CHARACTERISTICS
62WV5128ALL
Note:
1. At f = f
Symbol Parameter
I
I
I
I
Symbol Parameter
I
I
I
I
CC
CC
SB
SB
CC
CC
SB
SB
1
1
2
1
1
2
MAX
MAX
V
Supply Current
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
V
Supply Current
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
DD
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
DD
Dynamic Operating
Dynamic Operating
(2.5V - 3.6V)
(1.65V - 2.2V)
IS62WV5128BLL
Test Conditions
V
I
V
WE = V
f=1
V
V
CS1 = V
f = 1 MH
V
CS1 ≥ V
V
V
OUT
DD
DD
DD
IN
DD
IN
IN
MHZ
= V
≥ V
≤ 0.2V, f = 0
= Max.,
= Max., CS1 = 0.2V Com.
= Max.,
= Max.,
Test Conditions
V
I
V
WE = V
f=1
V
V
CS1 = V
f = 1 MH
V
CS1 ≥ V
V
V
= 0 mA, f = f
OUT
DD
DD
DD
IN
DD
IN
IN
IH
DD
DD
IH
MHZ
Z
DD
or V
= V
≥ V
≤ 0.2V, f = 0
-0.2V
,
– 0.2V, or
= Max.,
= Max., CS1 = 0.2V Com.
= Max.,
= Max.,
= 0 mA, f = f
– 0.2V,
IL
DD
IH
DD
DD
IH
Z
MAX
or V
-0.2V
– 0.2V, or
,
(1)
(1)
– 0.2V,
(Over Operating Range)
(Over Operating Range)
IL
Com.
Com.
Com.
MAX
Ind.
Ind.
Ind.
Ind.
Com.
Com.
Com.
Ind.
Ind.
Ind.
Ind.
Integrated Silicon Solution, Inc. — www.issi.com
55 ns
70 ns
Max.
0.35
0.35
Max.
0.35
0.35
40
45
15
15
15
15
25
30
10
10
15
15
Unit
mA
mA
mA
Unit
µA
mA
mA
mA
µA
01/29/08
Rev. E