IS62WV5128BLL-55T2I ISSI, Integrated Silicon Solution Inc, IS62WV5128BLL-55T2I Datasheet - Page 7

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IS62WV5128BLL-55T2I

Manufacturer Part Number
IS62WV5128BLL-55T2I
Description
IC SRAM 4MBIT 55NS 32TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS62WV5128BLL-55T2I

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (512K x 8)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
IS62WV5128ALL,
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC WAVEFORMS
READ CYCLE NO. 1
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
01/29/08
Symbol
t
t
t
t
t
t
t
t
t
V
RC
HZCS1
AA
OHA
ACS1
DOE
HZOE
LZOE
LZCS1
DD
-0.2V/V
ADDRESS
(2)
(2)
D
DD
OUT
-0.3V and output loading specified in Figure 1.
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CS1 Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CS1 to High-Z Output
CS1 to Low-Z Output
(1,2)
PREVIOUS DATA VALID
(Address Controlled) (CS1 = OE = V
IS62WV5128BLL
Min.
55
10
10
t
5
0
OHA
55 ns
Max.
55
55
25
20
20
(1)
t
(Over Operating Range)
AA
IL
t
RC
, WE = V
Min.
70
10
10
5
0
70 ns
IH
)
Max.
70
70
35
25
25
DATA VALID
t
OHA
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
7

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