MX0912B251Y TRAY NXP Semiconductors, MX0912B251Y TRAY Datasheet

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MX0912B251Y TRAY

Manufacturer Part Number
MX0912B251Y TRAY
Description
Transistors Bipolar - BJT BULKTR TNS-MICL
Manufacturer
NXP Semiconductors
Datasheet
1.MX0912B251Y_TRAY.pdf (12 pages)

Specifications of MX0912B251Y TRAY

Product Category
Transistors Bipolar - BJT
Rohs
yes
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
65 V
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
3 V
Maximum Dc Collector Current
15 A
Gain Bandwidth Product Ft
1.215 GHz
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-439A
Maximum Power Dissipation
690000 mW
Factory Pack Quantity
4
Part # Aliases
MX0912B251Y,114
Product specification
Supersedes data of November 1994
DATA SHEET
MX0912B251Y
NPN microwave power transistor
DISCRETE SEMICONDUCTORS
1997 Feb 19

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MX0912B251Y TRAY Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 ...

Page 2

Philips Semiconductors NPN microwave power transistor FEATURES Interdigitated structure; high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance of ...

Page 3

Philips Semiconductors NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CES V collector-emitter voltage CEO V emitter-base voltage EBO I collector current C ...

Page 4

Philips Semiconductors NPN microwave power transistor THERMAL CHARACTERISTICS T = 125 C unless otherwise specified. j SYMBOL PARAMETER R thermal resistance from junction to mounting base CW th j-mb R thermal resistance from mounting base to heatsink CW; note 1 ...

Page 5

Philips Semiconductors NPN microwave power transistor 300 handbook, halfpage P L (W) 250 200 0. Fig.3 Load power as a function of frequency. (In broadband test circuit ...

Page 6

Philips Semiconductors NPN microwave power transistor handbook, full pagewidth 1 s List of components COMPONENT DESCRIPTION L1, L2 0.65 mm diameter copper wire L3 4 turns 0.65 mm diameter copper wire C1 DC block C2 tantalum capacitor C3 electrolytic capacitor ...

Page 7

Philips Semiconductors NPN microwave power transistor handbook, full pagewidth 0.635 Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: = 10. r 1997 Feb 2.5 3 ...

Page 8

Philips Semiconductors NPN microwave power transistor handbook, full pagewidth 0 235 Fig.7 Input impedance as a function of frequency associated with optimum load impedance. ...

Page 9

Philips Semiconductors NPN microwave power transistor PACKAGE OUTLINE handbook, full pagewidth 3.3 2.9 3.3 Dimensions in mm. Torque on screws: max. 0.4 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm. 1997 Feb 19 12.85 max 0.15 max ...

Page 10

Philips Semiconductors NPN microwave power transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...

Page 11

Philips Semiconductors NPN microwave power transistor 1997 Feb 19 NOTES 11 Product specification MX0912B251Y ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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