MX0912B251Y TRAY NXP Semiconductors, MX0912B251Y TRAY Datasheet - Page 8

• Manufacturer Part Number: MX0912B251Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of MX0912B251Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 15 A
• Gain Bandwidth Product Ft: 1.215 GHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-439A
• Maximum Power Dissipation: 690000 mW
• Factory Pack Quantity: 4
• Part # Aliases: MX0912B251Y,114

Philips Semiconductors
1997 Feb 19
handbook, full pagewidth
handbook, full pagewidth
NPN microwave power transistor
V
V
CC
CC
= 50 V; Z
= 50 V; Z
Fig.8 Optimum load impedance as a function of frequency associated with input impedance.
Fig.7 Input impedance as a function of frequency associated with optimum load impedance.
o
o
= 5
= 5
P
P
L
L
= 235 W.
= 235 W.
j
j
j
j
0
0
0.2
0.2
0.2
0.2
0.5
0.5
0.5
0.5
0.2
0.2
1.215 GHz
0.960 GHz
0.5
0.5
1.215 GHz
0.960 GHz
1
1
8
1
1
1
1
2
2
5
5
2
2
2
2
10
10
MGL039
MGL040
5
5
5
5
10
10
10
10
MX0912B251Y
Product specification