BCV61 /T3 NXP Semiconductors, BCV61 /T3 Datasheet - Page 8

• Manufacturer Part Number: BCV61 /T3
• Description: Transistors Bipolar - BJT TRANS MATCHED PAIR TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BCV61 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 100 at 100 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BCV61,235

NXP Semiconductors
8. Test information
BCV61_4
Product data sheet
Fig 13. Maximum collector-emitter voltage as a function of emitter resistance
Fig 14. Test circuit current matching
Fig 15. BCV61 with emitter resistors
V
CE1max
(V)
I
30
20
10
C1
10
0
/I
−1
E2
= 1.3
Rev. 04 — 18 December 2009
V CE1
V CE1
1
I C1
I C1
A
A
TR1
TR1
2
3
2
3
R E
NPN general-purpose double transistors
TR2
TR2
1
4
1
4
R E
006aaa831
006aab977
10
constant
constant
I E2 =
I E2 =
50 mA
10 mA
R
E
(Ω)
5 mA
1 mA
I
© NXP B.V. 2009. All rights reserved.
E2
mbk082
=
BCV61
10
2
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