BULD1101ET4 STMicroelectronics, BULD1101ET4 Datasheet - Page 2

• Manufacturer Part Number: BULD1101ET4
• Description: Transistors Bipolar - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
• Manufacturer: STMicroelectronics

Specifications of BULD1101ET4

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 450 V
• Emitter- Base Voltage Vebo: 12 V
• Maximum Dc Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Maximum Power Dissipation: 35000 mW
• Factory Pack Quantity: 2500

Electrical ratings
1
2/11
Electrical ratings
Table 1.
Table 2.
Symbol
Symbol
R
R
V
V
V
thj-case
thj-amb
T
I
P
I
CEO
EBO
T
CES
I
CM
BM
I
stg
C
B
tot
J
Collector-emitter voltage (V
Collector-emitter voltage (I
Emitter-base voltage (I
Collector current
Collector peak current (t
Base current
Base peak current (t
Total dissipation at T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case
Thermal resistance junction-amb
Thermal data
Absolute maximum rating
P
c
< 5ms)
= 25°C
C
Parameter
Parameter
P
= 0)
< 5ms)
B
BE
= 0)
= 0)
__max
__max
-65 to 150
Value
Value
1100
450
150
3.57
100
1.5
12
35
3
6
3
BULD1101E
°C/W
°C/W
Unit
Unit
°C
°C
W
V
V
V
A
A
A
A