BULD1101ET4 STMicroelectronics, BULD1101ET4 Datasheet - Page 2
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BULD1101ET4
Manufacturer Part Number
BULD1101ET4
Description
Transistors Bipolar - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
Manufacturer
STMicroelectronics
Datasheet
1.BULD1101ET4.pdf
(11 pages)
Specifications of BULD1101ET4
Product Category
Transistors Bipolar - BJT
Rohs
yes
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
450 V
Emitter- Base Voltage Vebo
12 V
Maximum Dc Collector Current
3 A
Dc Collector/base Gain Hfe Min
20
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Maximum Power Dissipation
35000 mW
Factory Pack Quantity
2500
Available stocks
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Part Number
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Quantity
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Electrical ratings
1
2/11
Electrical ratings
Table 1.
Table 2.
Symbol
Symbol
R
R
V
V
V
thj-case
thj-amb
T
I
P
I
CEO
EBO
T
CES
I
CM
BM
I
stg
C
B
tot
J
Collector-emitter voltage (V
Collector-emitter voltage (I
Emitter-base voltage (I
Collector current
Collector peak current (t
Base current
Base peak current (t
Total dissipation at T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case
Thermal resistance junction-amb
Thermal data
Absolute maximum rating
P
c
< 5ms)
= 25°C
C
Parameter
Parameter
P
= 0)
< 5ms)
B
BE
= 0)
= 0)
__max
__max
-65 to 150
Value
Value
1100
450
150
3.57
100
1.5
12
35
3
6
3
BULD1101E
°C/W
°C/W
Unit
Unit
°C
°C
W
V
V
V
A
A
A
A