BULD1101ET4 STMicroelectronics, BULD1101ET4 Datasheet - Page 4

• Manufacturer Part Number: BULD1101ET4
• Description: Transistors Bipolar - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
• Manufacturer: STMicroelectronics

Specifications of BULD1101ET4

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 450 V
• Emitter- Base Voltage Vebo: 12 V
• Maximum Dc Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Maximum Power Dissipation: 35000 mW
• Factory Pack Quantity: 2500

Electrical characteristics
2.1
4/11
Typical characteristic
Figure 1.
Figure 3.
Figure 5.
Safe operating area
Output characteristics
Base-emitter saturation
voltage
Figure 2.
Figure 4.
Figure 6.
voltage
DC current gain
Derating curve
Collector-emitter saturation
BULD1101E