BULD1101ET4 STMicroelectronics, BULD1101ET4 Datasheet - Page 5

• Manufacturer Part Number: BULD1101ET4
• Description: Transistors Bipolar - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
• Manufacturer: STMicroelectronics

Specifications of BULD1101ET4

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 450 V
• Emitter- Base Voltage Vebo: 12 V
• Maximum Dc Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Maximum Power Dissipation: 35000 mW
• Factory Pack Quantity: 2500

BULD1101E
Figure 7.
Figure 9.
DC current gain
Reverse biased safe
operating area
Figure 8.
Resistive load switching
times
Electrical characteristics
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