BULD1101ET4 STMicroelectronics, BULD1101ET4 Datasheet - Page 3

• Manufacturer Part Number: BULD1101ET4
• Description: Transistors Bipolar - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
• Manufacturer: STMicroelectronics

Specifications of BULD1101ET4

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 450 V
• Emitter- Base Voltage Vebo: 12 V
• Maximum Dc Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Maximum Power Dissipation: 35000 mW
• Factory Pack Quantity: 2500

BULD1101E
2
Electrical characteristics
(T
Table 3.
Note (1) Pulsed duration = 300µs, duty cycle ≤1.5%
V
V
V
CEO(sus)
case
V
Symbol
CE(sat)
BE(sat)
(BR)EBO
I
h
CES
E
t
FE
t
s
ar
f
= 25°C unless otherwise specified)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Emitter-base
breakdown voltage (I
0)
Collector-emitter
sustaining voltage
(I
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Resistive load
Storage time
Fall time
Repetitive avalanche
energy
B
BE
= 0)
=0V)
Parameter
C
=
V
I
I
I
I
I
I
I
I
I
V
I
V
L =2mH
I
E
C
C
C
C
C
C
C
C
B1
BR
CE
CC
BE(off)
=1mA
=100mA
=1A
=1A
=1A
=0.25A V
=0.25A V
=2A
=2A
= -I
≤2.5A
=1100V
=125V
B2
=-5V
Test conditions
=0.5A t
I
I
I
B
B
B
V
V
=0.2A
=0.2A
=0.2A
CE
CE
CE
CE
=5V
=5V T
=5V
=5V T
(see fig.11)
C =1.8nF
I
(see fig.10)
C
p
=2.5A
= 300µs
T
J
J
J
=125°C
=125°C
=125°C
Electrical characteristics
Min. Typ. Max.
450
12
20
23
6
4
6
0.25
400
0.6
38
44
10
7
100
700
1.5
1.5
24
80
85
18
16
1
2
Unit
mJ
µA
µs
ns
V
V
V
V
V
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