BULD1101ET4 STMicroelectronics, BULD1101ET4 Datasheet - Page 8

• Manufacturer Part Number: BULD1101ET4
• Description: Transistors Bipolar - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
• Manufacturer: STMicroelectronics

Specifications of BULD1101ET4

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 450 V
• Emitter- Base Voltage Vebo: 12 V
• Maximum Dc Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Maximum Power Dissipation: 35000 mW
• Factory Pack Quantity: 2500

Package mechanical data
8/11
DIM.
C2
A1
A2
B2
V2
L2
L4
A
B
C
D
E
G
H
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0
o
TO-252 (DPAK) MECHANICAL DATA
TYP.
mm
0.8
MAX.
10.10
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
1.00
8
o
0.368
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.024
MIN.
0
o
0.031
TYP.
inch
P032P_B
BULD1101E
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
0.039
0
o