BULD1101ET4 STMicroelectronics, BULD1101ET4 Datasheet - Page 9

• Manufacturer Part Number: BULD1101ET4
• Description: Transistors Bipolar - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
• Manufacturer: STMicroelectronics

Specifications of BULD1101ET4

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 450 V
• Emitter- Base Voltage Vebo: 12 V
• Maximum Dc Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Maximum Power Dissipation: 35000 mW
• Factory Pack Quantity: 2500

BULD1101E
DIM.
A1
A3
B2
B3
B5
B6
C2
V1
L1
L2
A
B
C
D
E
G
H
L
15.90
MIN.
2.20
0.90
0.70
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
TO-251 (IPAK) MECHANICAL DATA
TYP.
0.30
0.80
mm
10
o
MAX.
16.30
2.40
1.10
1.30
0.90
5.40
0.85
0.95
0.60
0.60
6.20
6.60
4.60
9.40
1.20
1.00
0.087
0.035
0.028
0.025
0.204
0.018
0.019
0.237
0.252
0.173
0.626
0.354
0.031
MIN.
Package mechanical data
0.012
0.031
TYP.
inch
10
o
P032N_E
MAX.
0.094
0.043
0.051
0.035
0.213
0.033
0.037
0.024
0.024
0.244
0.260
0.181
0.642
0.370
0.047
0.039
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