BULD1101ET4 STMicroelectronics, BULD1101ET4 Datasheet - Page 7
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BULD1101ET4
Manufacturer Part Number
BULD1101ET4
Description
Transistors Bipolar - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
Manufacturer
STMicroelectronics
Datasheet
1.BULD1101ET4.pdf
(11 pages)
Specifications of BULD1101ET4
Product Category
Transistors Bipolar - BJT
Rohs
yes
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
450 V
Emitter- Base Voltage Vebo
12 V
Maximum Dc Collector Current
3 A
Dc Collector/base Gain Hfe Min
20
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Maximum Power Dissipation
35000 mW
Factory Pack Quantity
2500
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
BULD1101E
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at:
www.st.com
Package mechanical data
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