MT47H16M16BG-5E:B Micron Technology Inc, MT47H16M16BG-5E:B Datasheet - Page 87

• Manufacturer Part Number: MT47H16M16BG-5E:B
• Description: IC DDR2 SDRAM 256MBIT 5NS 84FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H16M16BG-5E:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
READ bursts are initiated with a READ command. The starting column and bank ad-
dresses are provided with the READ command, and auto precharge is either enabled or
disabled for that burst access. If auto precharge is enabled, the row being accessed is
automatically precharged at the completion of the burst. If auto precharge is disabled,
the row will be left open after the completion of the burst.
During READ bursts, the valid data-out element from the starting column address will
be available READ latency (RL) clocks later. RL is defined as the sum of AL and CL:
RL = AL + CL. The value for AL and CL are programmable via the MR and EMR com-
mands, respectively. Each subsequent data-out element will be valid nominally at the
next positive or negative clock edge (at the next crossing of CK and CK#). Figure 44
(page 88) shows examples of RL based on different AL and CL settings.
DQS/DQS# is driven by the DDR2 SDRAM along with output data. The initial LOW state
on DQS and the HIGH state on DQS# are known as the read preamble (
LOW state on DQS and the HIGH state on DQS# coincident with the last data-out ele-
ment are known as the read postamble (
Upon completion of a burst, assuming no other commands have been initiated, the DQ
will go High-Z. A detailed explanation of
window hold), and the valid data window are depicted in Figure 53 (page 96) and Fig-
ure 54 (page 97). A detailed explanation of
t
Data from any READ burst may be concatenated with data from a subsequent READ
command to provide a continuous flow of data. The first data element from the new
burst follows the last element of a completed burst. The new READ command should
be issued x cycles after the first READ command, where x equals BL/2 cycles (see Fig-
ure 45 (page 89)).
Nonconsecutive read data is illustrated in Figure 46 (page 90). Full-speed random
read accesses within a page (or pages) can be performed. DDR2 SDRAM supports the
use of concurrent auto precharge timing (see Table 41 (page 93)).
DDR2 SDRAM does not allow interrupting or truncating of any READ burst using BL = 4
operations. Once the BL = 4 READ command is registered, it must be allowed to com-
plete the entire READ burst. However, a READ (with auto precharge disabled) using BL
= 8 operation may be interrupted and truncated only by another READ burst as long as
the interruption occurs on a 4-bit boundary due to the 4n prefetch architecture of
DDR2 SDRAM. As shown in Figure 47 (page 91), READ burst BL = 8 operations may
not be interrupted or truncated with any other command except another READ com-
mand.
Data from any READ burst must be completed before a subsequent WRITE burst is al-
lowed. An example of a READ burst followed by a WRITE burst is shown in Figure 48
(page 91). The
fined in Figure 56 (page 100)).
AC (data-out transition skew to CK) is shown in Figure 55 (page 98).
t
DQSS (NOM) case is shown (
87
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t
t
RPST).
DQSQ (valid data-out skew),
t
256Mb: x4, x8, x16 DDR2 SDRAM
DQSCK (DQS transition skew to CK) and
t
DQSS [MIN] and
t
©2003 Micron Technology, Inc. All rights reserved.
DQSS [MAX] are de-
t
QH (data-out
t
RPRE). The
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