MT48H32M16LFBF-6:B Micron Technology Inc, MT48H32M16LFBF-6:B Datasheet - Page 23

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MT48H32M16LFBF-6:B

Manufacturer Part Number
MT48H32M16LFBF-6:B
Description
IC SDRAM 512MBIT 166MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H32M16LFBF-6:B

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
512M (32Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Output Drive Characteristics
Table 12: Target Output Drive Characteristics (Full Strength)
Notes 1–2 apply to all parameters and conditions; characteristics are specified under best and worst process variations/con-
ditions
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Voltage (V)
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.85
0.90
0.95
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
Notes:
1. Table values based on nominal impedance of 25Ω (full drive strength) at V
2. The full variation in drive current, from minimum to maximum (due to process, voltage,
11.20
14.00
16.80
19.60
22.40
23.80
23.80
23.80
23.80
23.80
23.80
23.80
23.80
23.80
23.80
23.80
and temperature) will lie within the outer bounding lines of the I-V curves.
Min
0.00
2.80
5.60
8.40
Pull-Down Current (mA)
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
18.53
26.80
32.80
37.05
40.00
42.50
44.57
46.50
47.48
48.50
49.40
50.05
51.35
52.65
53.95
55.25
56.55
57.85
59.15
60.45
61.75
Max
0.00
23
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Output Drive Characteristics
–11.20
–14.00
–16.80
–19.60
–22.40
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–2.80
–5.60
–8.40
Min
0.00
Pull-Up Current (mA)
© 2007 Micron Technology, Inc. All rights reserved.
–18.53
–26.80
–32.80
–37.05
–40.00
–42.50
–44.57
–46.50
–47.48
–48.50
–49.40
–50.05
–51.35
–52.65
–53.95
–55.25
–56.55
–57.85
–59.15
–60.45
–61.75
Max
0.00
DDQ/2
.

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