MT48H32M16LFBF-6:B Micron Technology Inc, MT48H32M16LFBF-6:B Datasheet - Page 59

• Manufacturer Part Number: MT48H32M16LFBF-6:B
• Description: IC SDRAM 512MBIT 166MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H32M16LFBF-6:B

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 30: WRITE-to-PRECHARGE
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Note:
Fixed-length WRITE bursts can be truncated with the BURST TERMINATE command.
When truncating a WRITE burst, the input data applied coincident with the BURST TER-
MINATE command is ignored. The last data written (provided that DQM is LOW at that
time) will be the input data applied one clock previous to the BURST TERMINATE com-
mand. This is shown in Figure 31 (page 60), where data n is the last desired data
element of a longer burst.
t
t
Command
Command
WR @
WR @
1. In this example DQM could remain LOW if the WRITE burst is a fixed length of two.
Address
Address
DQM
DQM
CLK
t
t
DQ
DQ
CK
CK < 15ns
15ns
WRITE
Bank a,
WRITE
Bank a,
Col n
D
Col n
D
T0
IN
IN
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
NOP
NOP
D
D
T1
IN
IN
t
WR
59
PRECHARGE
(a or all)
Bank
NOP
T2
t
WR
Micron Technology, Inc. reserves the right to change products or specifications without notice.
PRECHARGE
(a or all)
Bank
T3
NOP
t RP
NOP
NOP
T4
t RP
ACTIVE
Bank a,
NOP
Row
T5
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WRITE Operation
Bank a,
Don’t Care
ACTIVE
NOP
Row
T6