MT48H32M16LFBF-6:B Micron Technology Inc, MT48H32M16LFBF-6:B Datasheet - Page 65

• Manufacturer Part Number: MT48H32M16LFBF-6:B
• Description: IC SDRAM 512MBIT 166MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H32M16LFBF-6:B

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 35: READ With Auto Precharge Interrupted by a READ
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Internal
states
Command
Note:
Address
Bank m
Bank n
CLK
DQ
WRITE with auto precharge interrupted by a WRITE (with or without auto precharge)
A WRITE to bank m will interrupt a WRITE on bank n when registered. The precharge to
bank n will begin after
registered. The last valid data WRITE to bank n will be data registered one clock prior to
a WRITE to bank m (see Figure 42 (page 71)).
1. DQM is LOW.
Page active
NOP
T0
READ - AP
Page active
Bank n,
Bank n
T1
Col a
READ with burst of 4
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
t
WR is met, where
T2
CL = 3 (bank n)
NOP
65
READ - AP
Bank m,
T3
Bank m
Col d
Interrupt burst, precharge
READ with burst of 4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
T4
WR begins when the WRITE to bank m is
CL = 3 (bank m)
NOP
t
RP - bank n
D
OUT
T5
NOP
D
OUT
PRECHARGE Operation
T6
NOP
D
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OUT
Idle
T7
Don’t Care
NOP
t RP - bank m
D
Precharge
OUT