PESD5V0V4UW T/R NXP Semiconductors, PESD5V0V4UW T/R Datasheet - Page 10

• Manufacturer Part Number: PESD5V0V4UW T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0V4UW T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 6.4 V
• Clamping Voltage: 13 V
• Operating Voltage: 5 V
• Peak Surge Current: 1.7 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 (Max) mm W x 1.7 (Max) mm L
• Package / Case: SOT-665
• Peak Pulse Power Dissipation: 16 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD5V0V4UW,115

NXP Semiconductors
8. Package outline
PESDXV4UF_G_W_3
Product data sheet
Fig 10. Package outline PESDxV4UF (SOT886)
Fig 12. Package outline PESDxV4UW (SOT665)
Dimensions in mm
1.5
1.4
0.5
0.5
0.40
0.32
3
2
1
1.05
0.95
0.6
0.35
0.27
4
5
6
0.25
0.17
1.7
1.5
Dimensions in mm
1.3
1.1
0.50
max
Rev. 03 — 28 January 2008
Very low capacitance quadruple ESD protection diode arrays
5
1
04-07-22
0.5
0.04
max
1.7
1.5
1
2
Fig 11. Package outline PESDxV4UG (SOT353)
2.2
2.0
3
4
Dimensions in mm
0.27
0.17
1.35
1.15
0.3
0.1
5
0.6
0.5
1
0.65
0.18
0.08
PESDxV4UF/G/W
04-11-08
1.3
2.2
1.8
2
3
4
0.3
0.2
0.45
0.15
© NXP B.V. 2008. All rights reserved.
0.25
0.10
1.1
0.8
04-11-16
10 of 16