PESD5V0V4UW T/R NXP Semiconductors, PESD5V0V4UW T/R Datasheet - Page 12

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PESD5V0V4UW T/R

Manufacturer Part Number
PESD5V0V4UW T/R
Description
TVS Diode Arrays DIODE ARRAY ESD TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD5V0V4UW T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Breakdown Voltage
6.4 V
Clamping Voltage
13 V
Operating Voltage
5 V
Peak Surge Current
1.7 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.3 (Max) mm W x 1.7 (Max) mm L
Package / Case
SOT-665
Peak Pulse Power Dissipation
16 W
Factory Pack Quantity
4000
Part # Aliases
PESD5V0V4UW,115
NXP Semiconductors
PESDXV4UF_G_W_3
Product data sheet
Fig 14. Reflow soldering footprint PESDxV4UG (SOT353/SC-88A)
Fig 15. Wave soldering footprint PESDxV4UG (SOT353/SC-88A)
Dimensions in mm
4.50
solder lands
solder resist
occupied area
Dimensions in mm
2.70
solder lands
solder paste
solder resist
occupied area
0.70
2.35
Rev. 03 — 28 January 2008
Very low capacitance quadruple ESD protection diode arrays
0.50
(4 )
transport direction during soldering
2.25
0.50
(4 )
1.15
3.75
2.65
1.20
2.40
PESDxV4UF/G/W
2.65
0.60
(1 )
0.40 0.90
© NXP B.V. 2008. All rights reserved.
0.30
sot353_fr
2.10
1.00
4.00
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