AT45DB041B-RI Atmel, AT45DB041B-RI Datasheet - Page 3

• Manufacturer Part Number: AT45DB041B-RI
• Description: IC FLASH 4MBIT 20MHZ 28SOIC
• Manufacturer: Atmel

Specifications of AT45DB041B-RI

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 4M (2048 pages x 264 bytes)
• Speed: 20MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

3. Block Diagram
4. Memory Array
Figure 4-1.
3443D–DFLSH–2/08
SECTOR ARCHITECTURE
135,168 bytes (128K + 4K)
135,168 bytes (128K + 4K)
65,472 bytes (62K + 1984)
135,168 bytes (128K + 4K)
67,584 bytes (64K + 2K)
SECTOR 4 = 512 Pages
SECTOR 1 = 248 Pages
SECTOR 2 = 256 Pages
SECTOR 3 = 512 Pages
SECTOR 5 = 512 Pages
SECTOR 0 = 8 Pages
2112 bytes (2K + 64)
Memory Architecture Diagram
To provide optimal flexibility, the memory array of the AT45DB041B is divided into three levels of
granularity comprising of sectors, blocks, and pages. The Memory Architecture Diagram illus-
trates the breakdown of each level and details the number of pages per sector and block. All
program operations to the DataFlash occur on a page-by-page basis; however, the optional
erase operations can be performed at the block or page level.
RDY/BUSY
RESET
GND
VCC
SCK
WP
CS
SECTOR 0
PAGE (264 BYTES)
BUFFER 1 (264 BYTES)
BLOCK ARCHITECTURE
Block = 2112 bytes
BLOCK 254
BLOCK 255
BLOCK 30
BLOCK 31
BLOCK 32
BLOCK 33
BLOCK 62
BLOCK 63
BLOCK 64
BLOCK 65
BLOCK 0
BLOCK 1
BLOCK 2
(2K + 64)
SI
FLASH MEMORY ARRAY
I/O INTERFACE
8 Pages
PAGE ARCHITECTURE
BUFFER 2 (264 BYTES)
AT45DB041B
SO
Page = 264 bytes
PAGE 2045
PAGE 2046
PAGE 2047
PAGE 14
PAGE 15
PAGE 16
PAGE 17
PAGE 18
PAGE 0
PAGE 1
PAGE 6
PAGE 7
PAGE 8
PAGE 9
(256 + 8)
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