MT45W4MW16BCGB-701 WT Micron Technology Inc, MT45W4MW16BCGB-701 WT Datasheet - Page 6

• Manufacturer Part Number: MT45W4MW16BCGB-701 WT
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BCGB-701 WT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 2:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
ADV#
WAIT
WE#
OE#
UB#
CLK
CRE
CE#
LB#
Functional Block Diagram – 4 Meg x 16
A[21:0]
Note:
Control
logic
Functional block diagrams illustrate simplified device operation. For detailed information,
see ball descriptions in Table 1 on page 7; bus operations in Table 2 on page 8, Table 3 on
page 9, and Table 2 on page 8; and timing diagrams starting on page 42.
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
Refresh configuration
Device ID register
Bus configuration
Address decode
register (RCR)
register (BCR)
(DIDR)
logic
6
4,096K x 16
memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DRAM
array
buffers
output
Input/
MUX
and
General Description
©2005 Micron Technology, Inc. All rights reserved.
DQ[7:0]
DQ[15:8]