MT45W4MW16BCGB-708 WT Micron Technology Inc, MT45W4MW16BCGB-708 WT Datasheet - Page 33

• Manufacturer Part Number: MT45W4MW16BCGB-708 WT
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BCGB-708 WT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Device Identification Register
Table 9:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
Bit Field
Field name
Bit setting
Meaning
Device Identification Register Mapping
Row length
128 words
DIDR[15]
0b
Note:
The DIDR provides information on the device manufacturer, the CellularRAM genera-
tion, and the specific device configuration. Table 9 describes the bit fields in the DIDR.
The DIDR is accessed with CRE HIGH and A[19:18] = 01b or through the register access
software sequence with DQ = 0002h on the third cycle.
Vendors with 256-word row lengths for CellularRAM 1.5 devices will set DIDR[15] to 1b.
Bit Setting Version
0000b
0001b
0010b
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
Device version
(etc.)
DIDR[14:11]
(etc.)
2nd
3rd
1st
Device density
DIDR[10:8]
33
64Mb
010b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CellularRAM generation
CellularRAM 1.5
DIDR[7:5]
010b
©2005 Micron Technology, Inc. All rights reserved.
DIDR[4:0]
Vendor ID
00011b
Micron
Registers