MT45W4MW16BCGB-708 WT Micron Technology Inc, MT45W4MW16BCGB-708 WT Datasheet - Page 8

• Manufacturer Part Number: MT45W4MW16BCGB-708 WT
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BCGB-708 WT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 2:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
Mode
Read
Write
Standby
No operation
Configuration
register write
Configuration
register read
DPD
Bus Operations – Asynchronous Mode (BCR[15] = 1; Default)
Deep power-down
Notes:
Standby
Power
Active
Active
Active
Active
Idle
1. CLK must be LOW during asynchronous read and asynchronous write modes and to achieve
2. The WAIT polarity is configured through the bus configuration register (BCR[10]).
3. When LB# and UB# are in select mode (LOW), DQ[15:0] are enabled. When only LB# is in
standby power during standby and DPD modes. CLK must be static (HIGH or LOW) during
burst suspend.
select mode, DQ[7:0] are enabled. When only UB# is in the select mode, DQ[15:8] are
enabled.
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
CLK
L
L
L
L
L
L
L
1
ADV#
X
X
X
L
L
L
L
CE#
H
H
L
L
L
L
L
8
OE#
X
X
X
H
X
L
L
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WE#
H
H
X
X
X
L
L
CRE
H
H
X
L
L
L
L
LB#/
UB#
X
X
X
X
L
L
L
WAIT
High-Z
High-Z
Low-Z
Low-Z
Low-Z
Low-Z
Low-Z
General Description
©2005 Micron Technology, Inc. All rights reserved.
2
DQ[15:0]
Data-out
reg. out
Data-in
Config.
High-Z
High-Z
High-Z
X
3
Notes
5, 6
4, 6
4
7
4